Electron Transpot in High-Resistance Semiconductor Nanowires Through Two-Probe Measurements
作者：Yen-Fu Lin, Tzu-Han Chen, et al.
關鍵字：Pb1?xMnxSe, Two-Probe
論文來源：期刊
具體來源：Physical Chemistry Chemical Physics 2010, 12(36):10928-10932.
發(fā)表時間：2010年
Since the successful fabrication of semiconductor nanowires, various techniques have been developed to contact these nanowires and to probe their intrinsic electrical properties. Although many novel quasi one-dimensional materials such as Pb1
−xMnxSe nanoarrays were recently produced, their intrinsic electron transport properties have not been extensively studied so far. In this work, we demonstrate that an ordinary source–drain configuration of field-effect transistors or the two-probe measurement can be applied to the exploration of the intrinsic properties of nanowires. This two-probe measurement approach also works on highly resistive nanowires without an Ohmic contact issue. By using this method, electron transport behavior, resistivity, and carrier concentrations of ZnO, InP, GaP, and Pb1−xMnxSe semiconductor nanowires have been investigated. Due to the tiny cross-section and few conducting channels, a nanomaterial usually reveals an ultra high resistance. This technique demonstrates a two-probe characterization of nanostructures, paving the simplest way toward electrical characterizations of all high-resistance nanomaterials such as deoxyribonucleic acid (DNA), molecules and organics.