作者：Yi Chen, Xiao-Lei Gong, Jing-Gang Gai*
關(guān)鍵字：Progress and Challenges in Transfer of Large-Area Graphene Film
論文來(lái)源：期刊
具體來(lái)源：Advanced Science, 2016, 3(8): 1500343
發(fā)表時(shí)間：2016年
Graphene, the thinnest, strongest, and stiffest material with
exceptional thermal conductivity and electron mobility, has increasingly
received worldwide attention in the past few years. These unique properties may
lead to novel or improved technologies to address the pressing global
challenges in many applications including transparent conducting electrodes, fi
eld effect transistors, fl exible touch screen, single-molecule gas detection,
desalination, DNA sequencing, osmotic energy production, etc. To realize these applications,
it is necessary to transfer graphene fi lms from growth substrate to target
substrate with large-area, clean, and low defect surface, which are crucial to
the performances of large-area graphene devices. This critical review assesses
the recent development in transferring large-area graphene grown on Fe, Ru, Co,
Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized
methods. Among them, the transfers of the most attention kinds of graphene
synthesized on Cu and SiC substrates are discussed emphatically. The advances
and the main challenges of each wet and dry transfer method for obtaining the
transferred graphene film with large-area, clean, and low defect surface are
also reviewed. Finally, the article concludes the most promising methods and
the further prospects of graphene transfer.